Advanced Silicon Thermal Oxide Thickness Calculator

Oxidation time:

(min)

Initial Oxide :

Å

Temperatute :

°C

Crystal Orientation :

Oxidant Species :

Partial pressure :

(Default: 0.92)
Dopant Concentration :

Density:

cm-3

Doping Type :

References

References

  1. B.E. Deal and A.S. Grove, J. Appl. Phys. 36, 3770 (1965).
  2. H.Z. Massoud, et. al, J. Electrochem. Soc. 132, 2685 (1985).
  3. H. Sunami, J. Electrochem. Soc. 125, 892 (1978).
  4. R. R. Razouk, J. Electrochem. Soc. 128, 2214 (1981).
  5. E. A. Irene, J. Electrochem. Soc. 125, 1708 (1978).
  6. A.S. Grove, et. al., J. Appl. Phys. 35, 2629 (1964).
  7. B.E. Deal, J. Electrochem. Soc. 125, 576 (1978).
  8. E. A. Irene, J. Electrochem. Soc. 120, 1613 (1974).
  9. H. L. Tsai, et. al, J. Electrochem. Soc. 131, 411 (1984).
  10. B.E. Deal and M. Sklar, J. Electrochem. Soc. 112, 430 (1965).
  11. Deal, B.E (1988). The Thermal Oxidation of Silicon and Other Semiconductor Materials. In Gary E. McGuire (Ed.),
    Semiconductor materials and process technology handbook: for very large scale integration (VLSI) and ultra large scale integration (ULSI), (pp. 48-57), Noyes Publications